Features • 650 V enhancement mode power transist.
GaN Systems
GS-065-008-6-L - 700V E-mode GaN transistor
Features • 700 V enhancement mode power transistor • 850 V transient drain-to-source voltage • Bottom-cooled, small 5x6 mm PDFN package • RDS(on) = 16.
GaN Systems
GS-065-008-1-L - 650V E-mode GaN transistor
Features • 650 V enhancement mode power transistor • 850 V transient drain-to-source voltage • Bottom-cooled, small 5x6 mm PDFN package • RDS(on) = 22.
