GS-065-018-2-L DataSheet
GaN Systems
GS-065-018-2-L - 650V E-mode GaN transistor
Jun 17, 2024
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7 Hits
• 650 V enhancement mode power transistor • 850 V transient drain-to-source voltage • Bottom-cooled, 8x8 mm PDFN package • RDS(on) = 78 mΩ • IDSmax,DC...
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