GT60N321 Datasheet | Specifications & PDF Download

X

GT60N321 Silicon N-Channel IGBT

GT60N321 TOSHIBA Insulated Gate Bipolar Transistor.

Toshiba Semiconductor

60N321 - GT60N321

 GT60N321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60N321 High-Power Switching Applications Fourth Generation IGBT Unit: mm.
Rating: 1 ★ (3 votes)
Toshiba Semiconductor

GT60N321 - Silicon N-Channel IGBT

 GT60N321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60N321 High Power Switching Applications The 4th Generation Unit: mm · ·.
Rating: 1 ★ (2 votes)
logo
Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts