Gaalas Datasheet | Specifications & PDF Download

GaAlAs-IR-Lumineszenzdioden (880 nm) GaAlAs Infrared Emitters (880 nm) SFH 480 SFH 481 SFH 482 2.54mm spacing ø0.45 ø4.8 ø4.6 1 0.9 .1 Chip posi

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SUPER HIGH-POWER GaAlAs IR EMITTERS .130 MAX EPOXY .039 .048 .018 OD-100 FEATURES ANODE (CASE) .357 .362 .100 • • • • • Ultra high power output F

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GaAlAs HIGH POWER T-1 3/4 PACKAGE INFRARED EMITTING DIODE Description The MIE-534H4 is a GaAlAs infrared LED having a peak wavelength at 850nm. It fea

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Semiconductor Laser LNC701PS GaAlAs Semiconductor Laser ø5.6 +0 –0.025 ø4.3±0.1 ø3.55±0.1 ø1.0 min. Y 0.4±0.1 110˚±1˚ Unit : mm 2 Features Low thre

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HIGH-POWER GaAlAs IR EMITTERS 1.00 MIN. GLASS DOME .015 www.DataSheet4U.com OD-24F2 FEATURES ANODE (CASE) .209 .220 • High current capability • 8

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GaAlAs SIDE LOOK PACKAGE INFRARED EMITTING DIODE Description The MIE-114L3 is a GaAlAs infrared emitting diode 4.45±0.2 MIE-114L3 Package Dimensions

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Infrared Light Emitting Diodes LN78 GaAlAs Infrared Light Emitting Diode Unit : mm For optical control cystems ø2.4 2.9±0.25 4.5±0.3 3.9±0.3 Feat

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HIGH TEMPERATURE GaAlAs IR EMITTERS FEATURES • Extended operating temperature range • No internal coatings OD-850WHT • No derating or heat sink requ

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HIGH-POWER GaAlAs IR EMITTERS 1.00 MIN. GLASS DOME OD-880F FEATURES • High reliability liquid-phase epitaxially grown GaAlAs • 880nm peak emission fo

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SUPER HIGH-POWER GaAlAs IR EMITTERS FEATURES • Ultra high power output • Four wire bonds on die corners • Very narrow optical beam • Standard 3-lead T

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GaAlAs T-1 3/4 PACKAGE INFRARED EMITTING DIODE Description The MIE-526L3U is infrared emitting diodes in GaAlAs technology molded in pastel blue trans

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www.DataSheet4U.com High Speed GaAlAs Infrared Emitter OPE5985 The OPE5985 is GaAlAs infrared emitting diode that is designed for high power, low fo

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HI-REL GaAlAs IR EMITTERS FEATURES .010 R. GLASS DOME .005 .010 .082 .088 ANODE .084 .092 .058 .062 OD-880PP • High reliability LPE GaAlAs IRLEDs •

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GaAlAs T-1 Standard 3 Infrared Emitting Diode LTE-4206/LTE-4206C/LTE-4216/LTE-4216C Features Selected to specific on-line intensity and radiant intens

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Infrared Light Emitting Diodes LN184 GaAlAs Infrared Light Emitting Diode Light source for distance measuring systems Features High-power output, hig

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HIGH TEMPERATURE GaAlAs IR EMITTERS FEATURES ANODE (CASE) .209 .220 OD-880WHT GLASS .006 HIGH MAX 1.00 MIN. .015 • Extended operating temperature

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HIGH TEMPERATURE GaAlAs IR EMITTERS 1.00 MIN. GLASS DOME ANODE (CASE) .015 .209 .220 OD-880FHT FEATURES • Extended operating temperature range • No i

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HIGH TEMPERATURE GaAlAs IR EMITTERS FEATURES • Extended operating temperature range • No internal coatings • No derating or heat sink required to 80°C

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