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SUN12A60F New Generation N-Ch Power MOSFET HIGH SPEED SWITCHING APPLICATION Features  Low drain-source On resistance: RDS(on)=0.55Ω (Typ.)  Low ga

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SUN04A65F New Generation N-Ch Power MOSFET HIGH SPEED SWITCHING APPLICATION Features  Low drain-source On resistance: RDS(on)=2.4Ω (Typ.)  Low gat

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www.DataSheet4U.com 7th Generation Performance Chipset for the AMD Athlon™ XP VIA Confidential and Proprietary - 31 Design Wins www.DataSheet4U.com

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SUN08A70F New Generation N-Ch Power MOSFET HIGH SPEED SWITCHING APPLICATION Features  Low drain-source On resistance: RDS(on)=0.85Ω (Typ.)  Low ga

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PRODUCT DATA SHEET STMP3770 Media System on Chip Fifth-Generation Audio/Video Decoder Version 1.04 March 14, 2008 STFM1000 Radio Host, Debug Peer-to-

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SUN07A60F New Generation N-Ch Power MOSFET HIGH SPEED SWITCHING APPLICATION Features  Low drain-source On resistance: RDS(on)=1.05Ω (Typ.)  Low ga

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USB2227/USB2228 4th Generation USB2.0 Flash Media Controller with Integrated Card Power FETs PRODUCT FEATURES „ Datasheet „ „ „ „ „ „ „ „ „ „ „

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2nd Generation LLC Current Resonant Control IC, “FA6A00N Series” CHEN Jian YAMADAYA Masayuki SHIROYAMA Hironobu ABSTRACT issue: Power Semiconductors C

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ATS250X Datasheet Latest Version: 1.0 Aug 03, 2009 ATS250X Datasheet 1 Declaration Circuit diagrams and other information relating to products of A

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www.vishay.com VSK.41.., VSK.56.. Series Vishay Semiconductors ADD-A-PAK Generation VII Power Modules Thyristor/Diode and Thyristor/Thyristor, 45 A/

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SUN07A65D New Generation N-Ch Power MOSFET HIGH SPEED SWITCHING APPLICATION Features  Low drain-source On resistance: RDS(on)=1.2Ω (Typ.)  Low gat

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SUN07A65F New Generation N-Ch Power MOSFET HIGH SPEED SWITCHING APPLICATION Features  Low drain-source On resistance: RDS(on)=1.2Ω (Typ.)  Low gat

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SUN09A65F New Generation N-Ch Power MOSFET HIGH SPEED SWITCHING APPLICATION Features  Low drain-source On resistance: RDS(on)=0.7Ω (Typ.)  Low gat

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IC for Other Information Equipment AN8001FHK Gradation voltage generation IC for liquid crystal display Unit : mm s Overview The AN8001FHK is a grad

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APT50M60L2VFR 500V 77A 0.060W POWER MOS V ® FREDFET TO-264 Max Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MO

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Data Sheet FEATURES Outstanding gain linearity Ultrahigh gain, 5000 V/mV min Low VOS over temperature, 55 μV max TCVOS, 0.3 μV/°C max High PSRR, 3 μV/

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USB2227/USB2228 4th Generation USB 2.0 Flash Media Controller with Integrated Card Power FETs Highlights • Complete System Solution for interfacing

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