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MJH11020 - 15 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJH11017/D MJH10012 (See MJ10012) Complementary Darlington Silicon Power Transistors .
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H1102 - (H11xx) 10/100BASE-T SINGLE PORT SURFACE MOUNT MAGNETICS
10/100BASE-T SINGLE PORT SURFACE MOUNT MAGNETICS With Various Turns Ratios RoHS-5 peak reflow temperature rating 235°C RoHS-6 peak reflow temperature .
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H1102NL - 10/100BASE-T SINGLE PORT SURFACE MOUNT MAGNETICS
10/100BASE-T SINGLE PORT SURFACE MOUNT MAGNETICS With Various Turns Ratios RoHS peak reflow temperature rating: 245°C°° Meets IEEE 802.3 specification.
Inchange Semiconductor
MJH11020 - Silicon NPN Power Transistor
INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor isc Product Specification MJH11020 DESCRIPTION ·High DC Current Gain- : hFE = 400.
Fairchild Semiconductor
FJH1102 - Ultra Low Leakage Diode
FJH1102 Information Only Data Sheet FINAL REVERSE CURRENT & FORWARD VOLTAGE LIMITS MIGHT BE INCREASED SLIGHTLY General Description: An Ultra Low Leaka.
ON
MJH11020 - Complementary Darlington Silicon Power Transistors
MJH11017, MJH11019, MJH11021 (PNP) MJH11018, MJH11020, MJH11022 (NPN) Complementary Darlington Silicon Power Transistors These devices are designed f.
Motorola
MJH11021 - 15 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJH11017/D MJH10012 (See MJ10012) Complementary Darlington Silicon Power Transistors .
ON
MJH11021 - Complementary Darlington Silicon Power Transistors
MJH11017, MJH11019, MJH11021 (PNP) MJH11018, MJH11020, MJH11022 (NPN) Complementary Darlington Silicon Power Transistors These devices are designed f.
Motorola
MJH11022 - 15 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJH11017/D MJH10012 (See MJ10012) Complementary Darlington Silicon Power Transistors .
ON
MJH11022 - Complementary Darlington Silicon Power Transistors
MJH11017, MJH11019, MJH11021 (PNP) MJH11018, MJH11020, MJH11022 (NPN) Complementary Darlington Silicon Power Transistors These devices are designed f.
Toshiba Semiconductor
TLOH1102 - SMT LEDs
www.DataSheet4U.com Toshiba TLxH1102 SMT LEDs Features 3.2 (L) x 2.8 (W) x 3.4 (H) mm Size 2.8 mm Diameter Lens−Top Type InGaAlP Technology (Ultra H.
Toshiba Semiconductor
TLOH1102 - SMT LEDs
www.DataSheet4U.com Toshiba TLxH1102 SMT LEDs Features 3.2 (L) x 2.8 (W) x 3.4 (H) mm Size 2.8 mm Diameter Lens−Top Type InGaAlP Technology (Ultra H.
Toshiba Semiconductor
TLRH1102 - SMT LEDs
www.DataSheet4U.com Toshiba TLxH1102 SMT LEDs Features 3.2 (L) x 2.8 (W) x 3.4 (H) mm Size 2.8 mm Diameter Lens−Top Type InGaAlP Technology (Ultra H.
Toshiba Semiconductor
TLYH1102 - SMT LEDs
www.DataSheet4U.com Toshiba TLxH1102 SMT LEDs Features 3.2 (L) x 2.8 (W) x 3.4 (H) mm Size 2.8 mm Diameter Lens−Top Type InGaAlP Technology (Ultra H.
PULSE
H1102 - LAN DISCRETE TRANSFORMER MODULES
www.DataSheet4U.com LAN Discrete Transformer Modules LAN DISCRETE TRANSFORMER MODULES Pulse Discrete Transformer Modules Pulse offers the most comp.
Toshiba Semiconductor
TLXH1102 - SMT LEDs
Toshiba TLxH1102 SMT LEDs Features 3.2 (L) x 2.8 (W) x 3.4 (H) mm Size 2.8 mm Diameter Lens−Top Type InGaAlP Technology (Ultra High Brightness) Low D.
Inchange Semiconductor
MJH11022 - Silicon NPN Power Transistor
isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage : VCEO(SUS)= 250V (Min.) ·High DC Current Gain : hFE= 4.
