H5N2509P Datasheet | Specifications & PDF Download

H5N2509P Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance: R DS (on) = 0.053 Ω typ. • Low leakage current: IDSS = 1

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H5N2509P Silicon N Channel MOSFET High Speed Power Switching ADE-208-1378 (Z) Target Specification 1st. Edition Mar. 2001 Features • Low on-resista

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