H5N5006FM Datasheet | Specifications & PDF Download

H5N5006FM Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance: R DS (on) = 2.5 Ω typ. • Low leakage current: IDSS = 1 µ

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H5N5006FM Silicon N Channel MOS FET High Speed Power Switching ADE-208-1112 (Z) 1st. Edition Mar. 2001 Features • • • • • Low on-resistance: R DS(on

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