H6006_EMMicroelectronic Datasheet | Specifications & PDF Download

R EM MICROELECTRONIC - MARIN SA www.DataSheet4U.com H6006 Failsafe Watchdog Description The H6006 is a monolithic low power CMOS device combining a

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Green DMTH6006LPSWQ 60V +175°C N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8 Product Summary BVDSS 60V RDS(ON) 6.5mΩ @ VGS = 10V 10mΩ @ VGS =

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STTH6006W Turbo 2 ultrafast - high voltage rectifier Table 1. Main product characteristics IF(AV) VRRM Tj VF (typ) trr (max) 60 A 600 V 175° C 1.1 V 6

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STTH6006TV Turbo 2 ultrafast - high voltage rectifier Main product characteristics A1 K1 IF(AV) VRRM Tj VF (typ) trr (max) 2 x 30 A 600 V 150° C

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® STTH6003TV/CW HIGH FREQUENCY SECONDARY RECTIFIER MAJOR PRODUCT CHARACTERISTICS IF(AV) VRRM VF (max) trr (max) FEATURES AND BENEFITS COMBINES HIGHE

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STTH6006TV Turbo 2 ultrafast - high voltage rectifier Main product characteristics A1 K1 IF(AV) VRRM Tj VF (typ) trr (max) 2 x 30 A 600 V 150° C

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Product Summary Green DMTH6006SPS 60V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8 Features BVDSS 60V RDS(ON) MAX 6.2mΩ @ VGS = 10V ID

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Product Summary BVDSS 60V RDS(ON) MAX 6.5mΩ @ VGS = 10V 10mΩ @ VGS = 4.5V ID MAX TC = +25°C (Note 9) 100A 81.6A DMTH6006LPSW Green 60V 175°C N-CHA

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DMTH6006SPSW Green 60V +175°C N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8 Product Summary BVDSS 60V RDS(ON) MAX 6.2mΩ @ VGS = 10V ID MAX TC =

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FETek Technology Corp.  100% EAS Guaranteed  Green Device Available  Super Low Gate Charge  Excellent CdV/dt effect decline  Advanced high cell d

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www.vishay.com VS-C4PH6006LHN3 Vishay Semiconductors Hyperfast Soft Recovery Diode, 2 x 30 A FRED Pt® Gen 4 1 2 3 TO-247AD 3L Base common cathode

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