LM320081 (Sharp)
LCD Module
www.DataSheet4U.com
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DATE
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DATE
LIQUID CRYSTAL DISPLAY GROUP SHARP CORPORATION
SPEC No. LC92X1OA FILE No. ISSUE Ott
(239 views)
LM320081 (Sharp)
Passive Matric LCD Unit
www.DataSheet4U.com
LM320081
Passive Matrix LCD Unit
DESCRIPTION
The SHARP LM320081 Passive Matrix LCD consists of 320 × 240 dots with an FSTN, refle
(114 views)
ME600815 (Powerex Powers)
Three-Phase Diode Bridge Modules (150 Amperes/800 Volts)
ME600815
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Three-Phase Diode Bridge Modules
150 Amperes/800 Volts
(64 views)
PDC0810V (Potens semiconductor)
Dual N-Channel MOSFETs
100V Dual N-Channel MOSFETs
PDC0810V
General Description
These N-Channel enhancement mode power field effect transistors are using trench DMOS techn
(49 views)
SH79F0819 (SINO WEALTH)
Enhanced 8051 Microcontroller
SH79F0819
Enhanced 8051 Microcontroller with 10bit ADC
1. Features
8bits micro-controller with Pipe-line structured 8051 compatible instruction s
(47 views)
LH0081 (Sharp)
Z80 PIO Parallel Input / Output Controller
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(40 views)
PF08103A (Hitachi Semiconductor)
MOS FET Power Amplifier Module for E-GSM900 and DCS1800 Dual Band Handy Phone
PF08103A
MOS FET Power Amplifier Module for E-GSM900 and DCS1800 Dual Band Handy Phone
ADE-208-685B (Z) 3rd Edition Apr. 1999 Application
• Dual band
(39 views)
PDC0810T (Potens semiconductor)
Dual N-Channel MOSFETs
100V Dual N-Channel MOSFETs
PDC0810T
General Description
These N-Channel enhancement mode power field effect transistors are using trench DMOS techn
(38 views)
2SK1081 (Inchange Semiconductor)
N-Channel MOSFET Transistor
isc N-Channel MOSFET Transistor
2SK1081
DESCRIPTION ·Drain Current –ID=7A@ TC=25℃ ·Drain Source Voltage-
: VDSS=800V(Min) ·Minimum Lot-to-Lot variat
(38 views)
HA-081 (Taimag)
10/100 BASE-T SMT TRANSFORMER
NO: RD-LF-H41S DATE: 2005/09/15-I(REV:A1)
10/100 BASE-T SMT TRANSFORMER MODEL NO : HA-081
FEATURE: RoHS Compliant
RoHS peak solder rating 260 Designe
(36 views)
L2SC4081QT1 (Leshan Radio Company)
General Purpose Transistors NPN Silicon
LESHAN RADIO COMPANY, LTD.
General Purpose Transistors NPN Silicon
FEATURE
ƽLow Cob,Cob=2pF(Typ.).
ƽEpitaxial planar type. www.DataSheet4U.com ƽPNP
(34 views)
2SK1081-01 (Fuji)
N-Channel Silicon Power MOSFET
Free Datasheet http://www.Datasheet4U.com
Free Datasheet http://www.Datasheet4U.com
Free Datasheet http://www.Datasheet4U.com
Free Datasheet http:/
(34 views)
NWP2081T (NXP)
Half-bridge driver IC
NWP2081T
Half-bridge driver IC
Rev. 1 — 3 September 2013
Product data sheet
1. General description
The NWP2081T is a high-voltage monolithic integr
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VEMD8081 (Vishay)
Silicon PIN Photodiode
www.vishay.com
VEMD8081
Vishay Semiconductors
Silicon PIN Photodiode
LINKS TO ADDITIONAL RESOURCES
3D 3D
3D Models
Infographics
DESCRIPTION
VEMD
(31 views)
ME500810 (Powerex Powers)
Three-Phase Diode Bridge Modules (100 Amperes/800 Volts)
ME500810
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Three-Phase Diode Bridge Modules
100 Amperes/800 Volts
(30 views)
LTC4081 (Linear Technology)
500mA Li-Ion Charger
FEATURES
Battery Charger: nn Constant-Current/Constant-Voltage Operation
with Thermal Feedback to Maximize Charge Rate without Risk of Overheating nn
(30 views)
ADC081S021 (Texas Instruments)
Single-Channel 50-ksps to 200-ksps 8-Bit A/D Converter
Product Folder
Sample & Buy
Technical Documents
Tools & Software
Support & Community
ADC081S021
SNAS308G – APRIL 2005 – REVISED MAY 2016
ADC081S0
(30 views)
MTNN081404SH8 (Cystech Electonics)
Asymmetric Dual N- Channel Enhancement Mode MOSFET
CYStech Electronics Corp.
Spec. No. : C705H8 Issued Date : 2016.11.09 Revised Date : Page No. : 1/13
Asymmetric Dual N- Channel Enhancement Mode MOS
(29 views)
LV56081GP (Sanyo Semicon Device)
Charge Pump Power Supply
www.DataSheet.co.kr
Ordering number : ENA1499
Bi-CMOS LSI
LV56081GP
Overview
For CCD
Charge Pump Power Supply
The LV56081GP is charge pump power
(29 views)
2SK2081-01 (Fuji Electric)
N-channel MOS-FET
2SK2081-01
FAP-IIA Series
> Features
High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarante
(28 views)
