PDC0810V Datasheet (Potens semiconductor)

PDC0810V, Dual N-Channel MOSFETs

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Thes

PDC0810V Features

* 100V,7.8A, RDS(ON) =200mΩ @VGS = 10V

* Improved dv/dt capability

* Fast switching

* 100% EAS Guaranteed

* Green Device Available Applications

* Networking

* Load switch

* LED applications

* S1G1S2G2 S1 S2 Absolute Maximum Ratings Tc=25℃ unless otherwise noted