HAOLIN Datasheet | Specifications & PDF Download

HD60N03_HU60N03 Nov 2009 HD60N03 / HU60N03 30V N-Channel MOSFET BVDSS = 30 V RDS(on) = 9mΩ ID = 60 A FEATURES  Originative New Design  Superior

(19 views)

HD60N03_HU60N03 Nov 2009 HD60N03 / HU60N03 30V N-Channel MOSFET BVDSS = 30 V RDS(on) = 9mΩ ID = 60 A FEATURES  Originative New Design  Superior

(10 views)

HD50N06_HU50N06 Nov 2009 HD50N06 / HU50N06 60V N-Channel MOSFET BVDSS = 60 V RDS(on) = 22 mΩ ID = 50 A FEATURES  Originative New Design  Superio

(9 views)

100VDS／±20VGS／15A(ID) N-Channel Enhancement Mode MOSFET HD1H15A Features  VDSS=100V／VGSS=±20V／ID=15A RDS(ON)=105mΩ(Max.)@VGS=10V RDS(ON)=175mΩ(Max.

(8 views)

HD50N06_HU50N06 Nov 2009 HD50N06 / HU50N06 60V N-Channel MOSFET BVDSS = 60 V RDS(on) = 22 mΩ ID = 50 A FEATURES  Originative New Design  Superio

(7 views)