Description The +0 uses advanced trench techno.
H&M Semiconductor
HM4485A - P-Channel Enhancement Mode Power MOSFET
Description The HM4485A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety.
H&M Semiconductor
HM4485 - P-Channel Enhancement Mode Power MOSFET
Description The +0 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety .
H&M Semiconductor
HM4485B - P-Channel Enhancement Mode Power MOSFET
HM4485B P-Channel Enhancement Mode Power MOSFET Description The HM4485B uses advanced trench technology to provide excellent RDS(ON), This device is .