HM4485 Datasheet, Mosfet, H&M Semiconductor

HM4485 Features

• Mosfet
• VDS =-40V,ID =-13A RDS(ON) <15mΩ @ VGS=-10V RDS(ON) <18mΩ @ VGS=-4.5V
• High density cell design for ultra low Rdson
• Fully characterized avalanche voltage an

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Part number:

HM4485

Manufacturer:

H&M Semiconductor

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368.57kb

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📄 Datasheet

Description:

P-channel enhancement mode power mosfet. The +0 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide var

HM4485 Application

• Applications General Features
• VDS =-40V,ID =-13A RDS(ON) <15mΩ @ VGS=-10V RDS(ON) <18mΩ @ VGS=-4.5V
• High density cell design fo

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HM4485

H&M Semiconductor

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