HUASHUO Datasheet | Specifications & PDF Download

Description The HSX044N25 is the highest performance trench N-ch MOSFETs with extreme high cell density, which provide excellent RDSON and gate charge

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HSU3119 P-Ch 30V Fast Switching MOSFETs Description The HSU3119 is the high cell density trenched P-ch MOSFETs, which provide excellent RDSON and gat

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DW01 BATTERY PROTECTION IC FOR 1-CELL PACK ■ Features (1) High-accuracy voltage detection circuit ‧Overcharge detection voltage 3.6 to 4.4V Accu

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