HV3 Datasheet | Specifications & PDF Download

PROPRIETARY NOTE THIS SPECIFICATION IS THE PROPERTY OF BOE CQ AND SHALL NOT BE REPRODUCED OR COPIED WITHOUT THE WRITTEN PERMISSION OF BOE CQ AND MUST

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Global LCD Panel Exchange Center www.panelook.com PROPRIETARY NOTE THIS SPECIFICATION IS THE PROPERTY OF BOE DT AND SHALL NOT BEG REPRODUCED OR COPI

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PROPRIETARY NOTE THIS SPECIFICATION IS THE PROPERTY OF BOE CQ AND SHALL NOT BE REPRODUCED OR COPIED WITHOUT THE WRITTEN PERMISSION OF BOE CQ AND MUST

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SPEC. NUMBER - PROPRIETARY NOTE THIS SPECIFICATION IS THE PROPERTY OF BOE XINSHENG AND SHALL NOT BE REPRODUCED OR COPIED WITHOUT THE WRITTEN PERMISSI

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SPEC. NUMBER S863-8B013 PROPRIETARY NOTE THIS SPECIFICATION IS THE PROPERTY OF BOE XINSHENG AND SHALL NOT BE REPRODUCED OR COPIED WITHOUT THE WRITTEN

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Global LCD Panel Exchange Center www.panelook.com PROPRIETARY NOTE THIS SPECIFICATION IS THE PROPERTY OF BOE DT AND SHALL NOT BE REPRODUCED OR COPIE

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PROPRIETARY NOTE THIS SPECIFICATION IS THE PROPERTY OF BOE CQ AND SHALL NOT BE REPRODUCED OR COPIED WITHOUT THE WRITTEN PERMISSION OF BOE CQ AND MUST

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PROPRIETARY NOTE THIS SPECIFICATION IS THE PROPERTY OF BOE DT AND SHALL NOT BE REPRODUCED OR COPIED WITHOUT THE WRITTEN PERMISSION OF BOE DT AND MUST

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SPEC. NUMBER S863-8B003 PROPRIETARY NOTE THIS SPECIFICATION IS THE PROPERTY OF BOE XINSHENG AND SHALL NOT BE REPRODUCED OR COPIED WITHOUT THE WRITTEN

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CGHV31500F1 2.7 – 3.1 GHz, 500 W GaN HPA Description The CGHV31500F1 is a 500W packaged transistor fully matched to 50 ohms at both input and output p

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PROPRIETARY NOTE THIS SPECIFICATION IS THE PROPERTY OF BOE DT AND SHALL NOT BE REPRODUCED OR COPIED WITHOUT THE WRITTEN PERMISSION OF BOE DT AND MUST

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SUZHOU BOECT OPTOELECTRONICS TECHNOLOGY Preliminary Product Specification TITLE ：HV320WX2-201A Product ：32 LED P/N ： SUZHOU BOECT OPTOELECTRONICS TEC

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PROPRIETARY NOTE THIS SPECIFICATION IS THE PROPERTY OF BOE DT AND SHALL NOT BE REPRODUCED OR COPIED WITHOUT THE WRITTEN PERMISSION OF BOE DT AND MUST

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PROPRIETARY NOTE THIS SPECIFICATION IS THE PROPERTY OF BOE DT AND SHALL NOT BE REPRODUCED OR COPIED WITHOUT THE WRITTEN PERMISSION OF BOE DT AND MUST

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CGHV35400F 400 W, 2900 - 3500 MHz, 50-Ohm Input/Output Matched, GaN HEMT for S-Band Radar Systems Cree’s CGHV35400F is a gallium nitride (GaN) high el

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PROPRIETARY NOTE THIS SPECIFICATION IS THE PROPERTY OF BOE DT AND SHALL NOT BE REPRODUCED OR COPIED WITHOUT THE WRITTEN PERMISSION OF BOE DT AND MUST

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PRELIMINARY CGHV35060MP 60W, 2700-3500 MHz, 50V, GaN HEMT for S Band Radar and LTE base stations Cree’s CGHV35060MP is a 60W input matched, g

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PRELIMINARY CGHV31500F 500 W, 2700 - 3100 MHz, 50-Ohm Input/Output Matched, GaN HEMT for S-Band Radar Systems Cree’s CGHV31500F is a gallium nitride (

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CGHV35120F 120 W, 2.9 - 3.8 GHz, 50 V, GaN HEMT for S-Band Radar Systems Description The CGHV35120F is a gallium nitride (GaN) high electron mobility

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Global LCD Panel Exchange Center www.panelook.com SPEC. NUMBER PROPRIETARY NOTE THIS SPECIFICATION IS THE PROPERTY OF BOE HF AND SHALL NOT BE REPRO

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