HV5 Datasheet | Specifications & PDF Download

Supertex inc. HV5622 32-Channel Serial to Parallel Converter With Open Drain Outputs Features ►►Processed with HVCMOS® technology ►►Sink current mi

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MHV500-19-1 Si Hyperabrupt Varactor Diode Datasheet Features • High capacitance ratio : 2.5 Minimum • High quality factor : 2600 Typical • Compact sur

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PROPRIETARY NOTE THIS SPECIFICATION IS THE PROPERTY OF BOE DT AND SHALL NOT BE REPRODUCED OR COPIED WITHOUT THE WRITTEN PERMISSION OF BOE DT AND MUST

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MHV5xx-11 Series Silicon Hyperabrupt Tuning Varactor Diodes Features  All EPI Mesa Construction  High Reliability  High Quality Factor  Glass Pas

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MHV5xx-11 Series Silicon Hyperabrupt Tuning Varactor Diodes Features  All EPI Mesa Construction  High Reliability  High Quality Factor  Glass Pas

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HV5122 / HV5222 32-Channel, Serial-to-Parallel Converter with Open-Drain Outputs Features • Processed with High Voltage CMOS technology • Output vol

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CGHV50200F 200 W, 4.4 - 5.0 GHz, 50-Ohm Input/Output Matched, GaN HEMT Description The CGHV50200F is a gallium nitride (GaN) high electron mobility tr

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MHV501-19-6 Si Hyperabrupt Varactor Diode Datasheet Features • High capacitance ratio : 3.0 Minimum • High quality factor : 2500 Typical • Compact sur

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Freescale Semiconductor Technical Data Document Number: MHV5IC2215N Rev. 3, 1/2007 RF LDMOS Wideband Integrated Power Amplifier The MHV5IC2215NR2 wi

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MHV500-18-1 Silicon Hyperabrupt Tuning Varactor Data Sheet Rev A Features • Large capacitance ratio: 2.5 minimum • High quality factor: 2600 typical •

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Supertex inc. HV507 64-Channel Serial to Parallel Converter With High Voltage Push-Pull Outputs Features ► Processed with HVCMOS® technology ► Oper

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MHV507-19-1 Si Hyperabrupt Varactor Diode Datasheet Features • High capacitance ratio : 3.0 Minimum • High quality factor : 1500 Typical • Compact sur

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MHV5xx-11 Series Silicon Hyperabrupt Tuning Varactor Diodes Features  All EPI Mesa Construction  High Reliability  High Quality Factor  Glass Pas

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MHV5xx-11 Series Silicon Hyperabrupt Tuning Varactor Diodes Features  All EPI Mesa Construction  High Reliability  High Quality Factor  Glass Pas

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MHV5xx-11 Series Silicon Hyperabrupt Tuning Varactor Diodes Features  All EPI Mesa Construction  High Reliability  High Quality Factor  Glass Pas

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TVS HV5 THRU HV6 Fast Switching High Voltage Rectifier $[LDO/HDGHG – 0.2$ Sirocco '2 15 35,0$5<&+$5$&7(5,67,&6 IF(AV) VRRM IFSM VF IR TJ max

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MHV5xx-11 Series Silicon Hyperabrupt Tuning Varactor Diodes Features  All EPI Mesa Construction  High Reliability  High Quality Factor  Glass Pas

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Freescale Semiconductor Technical Data Document Number: MHV5IC1810N Rev. 0, 5/2006 RF LDMOS Wideband Integrated Power Amplifier The MHV5IC1810N wide

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HY51V(S)17403HG/HGL 4M x 4Bit EDO DRAM PRELIMINARY DESCRIPTION The HY51V(S)17403HG/HGL is the new generation dynamic RAM organized 4,194,304 words x

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MHV507-19-1 Silicon Hyperabrupt Varactor Diode Features  High Capacitance Ratio: 3 Minimum  High Quality Factor: 1500 Typical  Compact Surface Mo

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