CGHV50200F - GaN HEMT

MACOM

CGHV50200F Datasheet Preview — Preview of CGHV50200F PDF

Datasheet Details

Part number	CGHV50200F
Manufacturer	MACOM
File Size	1.29 MB
Description	GaN HEMT
Datasheet	CGHV50200F-MACOM.pdf

CGHV50200F Product details

Description

The CGHV50200F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV50200F ideal for troposcatter communications, 4.4 - 5.0 GHz C-Band SatCom applications and Beyond Line of Sight.

Features

4.4 - 5.0 GHz Operation.
180 W Typical PSAT.
11.5 dB Typical Power Gain.
48% Typical Power Efficiency.
50 Ohm Internally Matched.

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Published: May 13, 2024 |