CGHV50200F Datasheet, Hemt, MACOM

CGHV50200F Features

• Hemt
• 4.4 - 5.0 GHz Operation
• 180 W Typical PSAT
• 11.5 dB Typical Power Gain
• 48% Typical Power Efficiency
• 50 Ohm Internally Matched Applicati

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Part number:

CGHV50200F

Manufacturer:

MACOM

File Size:

1.29MB

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📄 Datasheet

Description:

Gan hemt. The CGHV50200F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high g

CGHV50200F Application

• Applications and Beyond Line of Sight. The GaN HEMT is matched to 50 ohm, for ease of use. It is designed for CW, pulse, and linear mode of power am

TAGS

CGHV50200F

MACOM

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