CGHV50200F - GaN HEMT
The CGHV50200F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV50200F ideal for troposcatter communications, 4.4 - 5.0 GHz C-Band SatCom applications and Beyond Line of Sigh
CGHV50200F Features
* 4.4 - 5.0 GHz Operation
* 180 W Typical PSAT
* 11.5 dB Typical Power Gain
* 48% Typical Power Efficiency
* 50 Ohm Internally Matched Applications
* Troposcatter Communications
* Beyond Line of Sight
* BLOS
* Satellite Communi
