CGHV50200F Datasheet - MACOM

CGHV50200F GaN HEMT

The CGHV50200F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV50200F ideal for troposcatter communications, 4.4 - 5.0 GHz C-Band SatCom applications and Beyond Line of Sigh.

CGHV50200F Features

* 4.4 - 5.0 GHz Operation

* 180 W Typical PSAT

* 11.5 dB Typical Power Gain

* 48% Typical Power Efficiency

* 50 Ohm Internally Matched Applications

* Troposcatter Communications

* Beyond Line of Sight

* BLOS

* Satellite Communi

CGHV50200F-MACOM.pdf

CGHV50200F Datasheet Preview — Preview of CGHV50200F PDF

Datasheet Details

Part number:

CGHV50200F

Manufacturer:

MACOM

File Size:

1.29 MB

Description:

Gan hemt.

📁 Related Datasheet

CGHV50200F GaN HEMT (Cree)

CGHV50200F GaN HEMT (Wolfspeed)

CGHV59070 RF Power GaN HEMT (Cree)

CGHV59070 RF Power GaN HEMT (Wolfspeed)

CGHV59350 GaN HEMT (Cree)

CGHV59350 GaN HEMT (Wolfspeed)

CGHV14250 GaN HEMT (Cree)

CGHV14250 GaN HEMT (Wolfspeed)

TAGS

CGHV50200F CGHV50200F GaN HEMT MACOM

CGHV50200F Distributor