Datasheet Specifications
- Part number
- CGHV59070
- Manufacturer
- Cree
- File Size
- 636.96 KB
- Datasheet
- CGHV59070-Cree.pdf
- Description
- RF Power GaN HEMT
Description
PRELIMINARY CGHV59070 70 W, 4.4-5.9 GHz, 50 V, RF Power GaN HEMT Cree’s CGHV59070 is an internally matched gallium nitride (GaN) high electron mobili.
Features
* 4.4 - 5.9 GHzApplications
* GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CGHV59070 ideal for linear and compressed amplifier circuits. The transistor is available in a flange and pill package. PNP’sa: cCkGaHgeV5T9y0p7e:04F,4C0G22H4V,5494007107P0 Typical Performance Over 4.8 - 5.9 GCGHV59070 Distributors
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