CGHV59350
Cree
2.90MB
Gan hemt. R1 RES, 5.1OHM, +/- 1%, 1/16W,0603 R2 RES, 10OHM, +/- 1%, 1/16W,0603 C1,C2 CAP, 5.6pF, +/- 0.25 pF,250V, 0603 C3,C8 CAP, 20pF, +
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CGHV59350 - GaN HEMT
(Wolfspeed)
CGHV59350
350 W, 5.2 - 5.9 GHz, 50-Ohm Input/Output Matched, GaN HEMT for C-Band Radar Systems
Description
Wolfspeed's CGHV59350 is a gallium nitride .
CGHV59070 - RF Power GaN HEMT
(Cree)
PRELIMINARY
CGHV59070
70 W, 4.4-5.9 GHz, 50 V, RF Power GaN HEMT
Cree’s CGHV59070 is an internally matched gallium nitride (GaN) high electron mobili.
CGHV59070 - RF Power GaN HEMT
(Wolfspeed)
CGHV59070
70 W, 4.4 - 5.9 GHz, 50 V, RF Power GaN HEMT
Description
Wolfspeed's CGHV59070 is an internally matched gallium nitride (GaN) high electron .
CGHV50200F - GaN HEMT
(Cree)
CGHV50200F
200 W, 4400 - 5000 MHz, 50-Ohm Input/Output Matched, GaN HEMT
Cree’s CGHV50200F is a gallium nitride (GaN) high electron mobility transisto.
CGHV50200F - GaN HEMT
(Wolfspeed)
CGHV50200F
200 W, 4.4 - 5.0 GHz, 50-Ohm Input/Output Matched, GaN HEMT
Description
Wolfspeed's CGHV50200F is a gallium nitride (GaN) high electron mob.
CGHV50200F - GaN HEMT
(MACOM)
CGHV50200F
200 W, 4.4 - 5.0 GHz, 50-Ohm Input/Output Matched, GaN HEMT
Description
The CGHV50200F is a gallium nitride (GaN) high electron mobility tr.
CGHV14250 - GaN HEMT
(Cree)
CGHV14250
250 W, 1200 - 1400 MHz, GaN HEMT for L-Band Radar Systems
Cree’s CGHV14250 is a gallium nitride (GaN) high electron mobility transistor (HE.
CGHV14250 - GaN HEMT
(Wolfspeed)
CGHV14250
250 W, DC - 1.6 GHz, GaN HEMT for L-Band Radar Systems
Description
Wolfspeed’s CGHV14250 is a gallium nitride (GaN) high electron mobility t.
CGHV14500 - GaN HEMT
(Cree)
CGHV14500
500 W, 1200 - 1400 MHz, GaN HEMT for L-Band Radar Systems
Cree’s CGHV14500 is a gallium nitride (GaN) high electron mobility transistor (HE.
CGHV14500F - GaN HEMT
(MACOM)
CGHV14500F
500 W, DC - 1800 MHz, GaN HEMT for L-Band Radar Systems
Description
The CGHV14500 is a gallium nitride (GaN) high electron mobility transis.