CGHV59350 GaN HEMT

Cree

Description

PRELIMINARY CGHV59350 350 W, 5200 - 5900 MHz, 50-Ohm Input/Output Matched, GaN HEMT for C-Band Radar Systems Cree’s CGHV59350 is a gallium nitride (Ga.
R1 RES, 5.

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Datasheet Specifications

Part number: CGHV59350
Manufacturer: Cree
File Size: 2.90 MB
Datasheet: CGHV59350-Cree.pdf
Description: GaN HEMT

Features

* 5.2 - 5.9 GHz Operation
* 450 W Typical Output Power
* 10.5 dB Power Gain
* 55% Typical Drain Efficiency
* 50 Ohm Internally Matched

Applications

* The transistor is supplied in a ceramic/metal flange package, type 440217 and 440218. Package Type: PN: 440217 CGHV59350 and 440218 Typical Performance Over 5.2 - 5.9 GHz (TC = 25˚C) of Demonstration Amplifier Parameter 5.2 GHz 5.55 GHz 5.9 GHz Output Power 440 445 490 Gain 10.5 10.5

CGHV59350 Distributors

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CGHV59350 GaN HEMT Cree

Cree CGHV59350-like datasheet