* 4.4 - 5.0 GHz Operation
* 180 W Typical PSAT
* 11.5 dB Typical Power Gain
* 48% Typical Power Efficiency
* 50 Ohm Internally Matched Applications
* Troposcatter Communications
* Beyond Line of Sight
* BLOS
* Satellite Communi
CGHV50200F Datasheet (1.01 MB)
CGHV50200F
Cree
1.01 MB
Gan hemt.
CGHV50200F
200 W, 4400 - 5000 MHz, 50-Ohm Input/Output Matched, GaN HEMT
Cree’s CGHV50200F is a gallium nitride (GaN) high electron mobility transisto.
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