Datasheet Specifications
- Part number
- CGHV50200F
- Manufacturer
- Cree
- File Size
- 1.01 MB
- Datasheet
- CGHV50200F-Cree.pdf
- Description
- GaN HEMT
Description
CGHV50200F 200 W, 4400 - 5000 MHz, 50-Ohm Input/Output Matched, GaN HEMT Cree’s CGHV50200F is a gallium nitride (GaN) high electron mobility transisto.
Features
* 4.4 - 5.0 GHz OperationApplications
* and Beyond Line of Sight. The GaN HEMT is matched to 50 ohm, for ease of use. It is designed for CW, pulse, and linear mode of power amplifier operation. The transistor is supplied in a ceramic/metal flange package, type 440217. PN: Package TCyGpHeV: 45400220107F Typical Performance Over 4.4-5.0CGHV50200F Distributors
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