HY-10 Datasheet | Specifications & PDF Download

HYG053N10NS1P/B Feature  100V/120A RDS(ON)=4.8 mΩ(typ.)@VGS = 10V  100% Avalanche Tested  Reliable and Rugged  Halogen-Free Devices Available (RoH

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ACT108W-600E www.DataSheet4U.com AC Thyristor power switch Rev. 02 — 26 May 2009 Product data sheet 1. Product profile 1.1 General description AC Th

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¯E¶§¦³--¤½¥q ` HY510N PC POWER SUPPLY SUPERVISOR Data Sheet REV. 1.30 September 21, 2004 The information in this document is subject to change wit

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HY3810P/M/B/PS/PM Features • 100V/180A RDS(ON) = 5.0 m(typ.) @ VGS=10V • 100% avalanche tested • Reliable and Rugged • Lead Free and Green Devices

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2 Phase Hybrid Stepping Motor 42D SERIES (For large quantity orders) □42mm 1.8° Bipolar STA-42D series can achieve larger torque than existing motor

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•»• •i–¼•F SMA-Z1001 LF No.1054 RoHS Žw—ߑΉž Meet for RoHS •R•¸ Hideki Nakamichi ”-•s”NŒŽ“ú PD F w C Žd—l•‘”Ô•† ww re .nu at an e ce. 8 com Tr ia

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isc Thyristors TIC106M APPLICATIONS ·5A contimunous on-state current ·30A surge-current ·Glass passivated ·Max IGT of 200μA ·100% avalanche tested ·

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HY3210P/M/B/PS/PM Features • 100V/120A RDS(ON) = 6.8 mΩ (typ.) @ VGS=10V • 100% avalanche tested • Reliable and Rugged • Lead Free and Green Devices

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` HY510N PC POWER SUPPLY SUPERVISOR Data Sheet REV. 1.30 September 21, 2004 The information in this document is subject to change without notice. 1 11

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C106 Series Pin Out 3 21 Thyristors Surface Mount > 200 - 600V > C106 Series Pb Description Glassivated PNPN devices designed for high volume consum

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SK hynix e-NAND Product Family eMMC5.1 Compatible Rev 1.0 / Sep. 2017 1 Revision History Revision No. 0.1 1.0 - Preliminary - Official release H

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HYG053N10NS1P/B Feature  100V/120A RDS(ON)=4.8 mΩ(typ.)@VGS = 10V  100% Avalanche Tested  Reliable and Rugged  Halogen-Free Devices Available (RoH

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HY3610P N-Channel Enhancement Mode MOSFET Features Pin Description • 100V/160A RDS(ON) = 4.5 mΩ (typ.) @ VGS=10V • 100% avalanche tested • Reliabl

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Thyristors TIC106D APPLICATIONS ·5A contimunous on-state current ·30A surge-current ·Max IGT of 200μA ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL

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HY1001M/P N-Channel Enhancement Mode MOSFET Features • 70V/75A, RDS(ON)=7.8mΩ (typ.) @ VGS=10V • Avalanche Rated • Reliable and Rugged • Lead Free a

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INCHANGE Semiconductor isc Thyristors isc Product Specification C106 FEATURES ·Glassivated surface for reliability and uniformity ·Practical level t

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WESTCODE An IXYS Company Date:- 22 June, 2011 Data Sheet Issue:- P1 Prospectve Data Medium Voltage Thyristor Type K1000M#600 to K1000M#650 Developme

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HYG053N10NS1D/U/V N-Channel Enhancement Mode MOSFET HYG053N10NS1D/U/V Feature HYG053N10NS1D/U/V Pin Description  100V/95A RDS(ON)=5.2mΩ(typ.)@VG

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LAN8770 100BASE-T1 Ethernet PHY Transceiver Highlights • Single-chip Ethernet physical layer transceiver • Compliant with IEEE 802.3bw-2015 (100BASE

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