HY12-P Datasheet | Specifications & PDF Download

GD15PHY120F4S STARPOWER SEMICONDUCTOR GD15PHY120F4S 1200V/15A in one-package General Description STARPOWER IGBT Power Module provides ultra low conduc

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HY12P65/HY12P66 Datasheet DMM Specialized IC Embedded Digital T-RMS . © 2010-2015 HYCON Technology Corp. www.hycontek.com Preliminary 1 DS-HY12P65-

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www.FindLCD.com SPECIFICATION FOR LCM MODULE MODULE NO.: GG-HY12232L-202 DOC.REVISION：01 Customer Approval: PREPARED BY (RD ENGINEER) PREPARED BY (QA

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HY12P65/HY12P66 Datasheet DMM Specialized IC Embedded Digital T-RMS . © 2010-2015 HYCON Technology Corp. www.hycontek.com Preliminary 1 DS-HY12P65-

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HY12P62 Datasheet 2000 Counts DMM Specialized IC Embedded Digital T-RMS © 2014 HYCON Technology Corp. www.hycontek.com   Preliminary 1 DS-HY12P63-V

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HY12P03C2 Feature Description  -30V/-50A RDS(ON)= 10.4mΩ(typ.) @VGS = -10V RDS(ON)= 14.2mΩ(typ.) @VGS = -4.5V  100% Avalanche Tested  Reliable and

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Current Transducers HY 5 to 25-P For the electronic measurement of currents : DC, AC, pulsed, mixed, with a galvanic isolation between the primary cir

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HY1203S Feature  30V/12A RDS(ON) = 7.5 mΩ(typ.)@VGS = 10V RDS(ON) = 9.0 mΩ(typ.)@VGS = 4.5V  Avalanche Rated  Reliable and Rugged  Lead Free Devic

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HY1210D/U/V N-Channel Enhancement Mode MOSFET Feature  100V/26A RDS(ON) = 32mΩ(typ.)@VGS = 10V RDS(ON) = 34mΩ(typ.)@VGS = 4.5V  100% Avalanche Tes

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HY1210D/U/V N-Channel Enhancement Mode MOSFET Feature  100V/26A RDS(ON) = 32mΩ(typ.)@VGS = 10V RDS(ON) = 34mΩ(typ.)@VGS = 4.5V  100% Avalanche Tes

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HY1210D/U/V N-Channel Enhancement Mode MOSFET Feature  100V/26A RDS(ON) = 32mΩ(typ.)@VGS = 10V RDS(ON) = 34mΩ(typ.)@VGS = 4.5V  100% Avalanche Tes

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HY12P03S Features • -30V / -12A RDS(ON)=11.5 m Ω (typ.) @ VGS=-10V RDS(ON)=16.5 m Ω (typ.) @ VGS=-4.5V • Avalanche Rated • Reliable and Rugged • Lead

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GD35PHY120F5S STARPOWER SEMICONDUCTOR GD35PHY120F5S 1200V/35A PIM in one-package General Description STARPOWER IGBT Power Module provides ultra low co

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