HY3210B Datasheet | Specifications & PDF Download

HY3210B N-Channel Enhancement Mode MOSFET

HY3210P/M/B/PS/PM Features • 100V/120A RDS(ON) .

HY3210P/M/B/PS/PM Features • 100V/120A RDS(ON) = 6.8 mΩ (typ.) @ VGS=10V • 100% avalanche tested • Reliable and Rugged • Lead Free and Green Devices

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HY3210B-VB HY3210B-VB Datasheet N-Channel 100-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.010 at VGS = 10 V 100 0.023 at

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