HYG028N10NS1B Datasheet | Specifications & PDF Download

HYG028N10NS1B N-Channel Enhancement Mode MOSFET

HYG028N10NS1P/B Feature  100V/230A RDS(ON)=2.6.

HYG028N10NS1B6 N-Channel Enhancement Mode MOSFET Feature  100V/230A RDS(ON)=2.4mΩ (typ.) @ VGS = 10V  100% Avalanche Tested  Reliable and Rugged

(3 views)

HYG028N10NS1P/B Feature  100V/230A RDS(ON)=2.6mΩ (typ.) @ VGS = 10V  100% Avalanche Tested  Reliable and Rugged  Lead-Free and Green Devices Avai

(2 views)

HYG028N10NS1B Distributor