HYG050N13NS1B Datasheet | Specifications & PDF Download

HYG050N13NS1B N-Channel Enhancement Mode MOSFET

HYG050N13NS1P/B Feature  135V/200A RDS(ON)=4.0.

HYG050N13NS1B6 Feature  135V/200A RDS(ON)=3.8mΩ(typ.) @ VGS = 10V  100% Avalanche Tested  Reliable and Rugged  Lead-Free and Green Devices Availa

(2 views)

HYG050N13NS1P/B Feature  135V/200A RDS(ON)=4.0mΩ(typ.) @ VGS = 10V  100% Avalanche Tested  Reliable and Rugged  Lead-Free and Green Devices Avail

(2 views)

HYG050N13NS1B Distributor