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Infineon
PTFB212503EL - Thermally-Enhanced High Power RF LDMOS FETs
PTFB212503EL PTFB212503FL Thermally-Enhanced High Power RF LDMOS FETs 240 W, 2110 – 2170 MHz Description The PTFB212503EL and PTFB212503FL are 240-w.
Infineon
ITS4142N - Smart High-Side Power Switch
Smart High-Side Power Switch for Industrial Applications 1 Channel: 1 x 200mΩ ITS 4142N Features • Short circuit protection • Current limitation • O.
Infineon Technologies AG
BTS307 - Smart High-Side Power Switch
Smart High-Side Power Switch PROFET® BTS307 Features Overload protection Current limitation Short circuit protection Thermal shutdown Over.
Infineon Technologies
IKP03N120H2 - HighSpeed 2-Technology
IKP03N120H2, IKW03N120H2 www.DataSheet4U.com IKB03N120H2 HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode • Designed for.
Infineon
ITS4141N - Smart High-Side Power Switch
Smart High-Side Power Switch for Industrial Applications 1 Channel: 1 x 200mΩ ITS 4141N Features • Short circuit protection • Current limitation • O.
Infineon
TLD1310EL - 3 Channel High Side Current Source
LITIX™ Basic TLD1310EL 3 Channel High-Side Current Source Package PG-SSOP-14 Marking TLD1310 1 Overview Applications • Exterior LED lighting appli.
Infineon
TLD1315EL - 3 Channel High Side Current Source
Infineon® LITIXTM Basic TLD1315EL 3 Channel High Side Current Source Data Sheet Rev. 1.1, 2015-03-24 Automotive TLD1315EL 1 2 3 3.1 3.2 4 4.1 4.2 4..
Infineon
GTVA261701FA - Thermally-Enhanced High Power RF GaN HEMT
advance specification GTVA261701FA advance specification Thermally-Enhanced High Power RF GaN HEMT 170 W, 50 V, 2620 – 2690 MHz Description The GTV.
Infineon
TLI4966G - High Precision Hall-Effect Switch
Data Sheet, Rev 1.0, October 2019 TLI4966G High Precision Hall-Effect Switch with Direction Detection Sensors Edition 2018-12-11 Published by Infineo.
Infineon
IM67D130A - AEC-Q103 qualified high performance digital XENSIV MEMS microphone
IM67D130A AEC-Q103 qualified high performance digital XENSIV™ MEMS microphone Features • Dynamic range of 103dB for best speech performance - Signal .
Infineon
PTFB210801FA - Thermally-Enhanced High Power RF LDMOS FET
PTFB210801FA Thermally-Enhanced High Power RF LDMOS FET 80 W, 28 V, 2110 – 2170 MHz Description The PTFB210801FA LDMOS FET is designed for use in mu.
Infineon Technologies AG
BSP742RI - Smart Power High-Side-Switch
BSP 742 RI Smart Power High-Side-Switch Features • Overload protection • Current limitation • Short circuit protection • Thermal shutdown with restar.
Infineon Technologies AG
SBH52414P-FSAN - High Power BIDI Optical Standard Module 1310 nm Emitting/ 1550 nm Receiving
Fiber Optics High Power BIDI® Optical Standard Module 1310 nm Emitting, 1550 nm Receiving SBH52414x-FSAN Features • Designed for application in pas.
Infineon
MA12040P - Filterless and High-Efficiency +4V to +18V Audio Amplifier
MA12040P Filterless and High-Efficiency +4V to +18V Audio Amplifier with I2S Digital Input Description The MA12040P is a super-efficient audio power.
Infineon Technologies AG
BTS550P - Smart Highside High Current Power Switch
PROFET® Data Sheet BTS550P Smart Highside High Current Power Switch Reversave • Reverse battery protection by self turn on of power MOSFET • Overlo.
Infineon
ICE1PD265G - Power Factor Controller + Cool- MOS: BoostSET IC for High Power Factor and low THD
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Infineon
PTFC262808SV - Thermally-Enhanced High Power RF LDMOS FET
PTFC262808SV Thermally-Enhanced High Power RF LDMOS FET 280 W, 28 V, 2620 – 2690 MHz Description The PTFC262808SV is a 280-watt LDMOS FET intended f.
Infineon
K50EEH5 - High-speed5 IGBT
IKW50N65EH5 High speed series fifth generation High speed 5 IGBT in TRENCHSTOPTM 5 technology copacked with full-rated RAPID 1 fast and soft antipa.
Infineon Technologies
SKW20N60HS - High Speed IGBT
SKW20N60HS ^ High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed .
Infineon
G50N60HS - High Speed IGBT
SGW50N60HS www.DataSheet4U.com High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time –.