IBC30G Datasheet | Specifications & PDF Download

iscN-Channel MOSFET Transistor ·FEATURES ·Low drain-source on-resistance: RDS(ON) =2.2Ω (MAX) ·Enhancement mode: Vth = 2 to 4V (VDS = 10 V, ID=0.25mA

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www.vishay.com IRFIBC30G Vishay Siliconix Power MOSFET D TO-220 FULLPAK G S GD S N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 600 VG

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IRFIBC30G, SiHFIBC30G Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 600 VGS = 1

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PD - 95611 IRFIBC30GPbF • Lead-Free www.DataSheet4U.com www.irf.com 1 7/29/04 IRFIBC30GPbF 2 www.irf.com IRFIBC30GPbF www.irf.com 3 IRFIB

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