SiHFIBC30G Datasheet | Vishay

FEATURES - Isolated Package - High Voltage Isolation = 2.5 k VRMS (t = 60 s; f = 60 Hz) - Sink to Lead Creepage Distance = 4.8 mm - Dynamic d V/dt Rating - Low Thermal Resistance - Lead (Pb)-free Available Available Ro HS- PLIANT DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in mercial-industrial applications. The moulding pound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The FULLPAK is mounted to a heatsink using a single clip or by a single screw fixing. TO-220 FULLPAK IRFIBC30GPb F Si HFIBC30G-E3 IRFIBC30G Si HFIBC30G ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta VGS at 10 V TC = 25 °C TC = 100 °C Linear Derating Factor Single Pulse Avalanche Energyb Repetitive Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery d V/dtc TC = 25 °C PD d V/dt Operating Junction and Storage Temperature Range TJ, Tstg Soldering Remendations (Peak Temperature) for 10 s Mounting Torque 6-32 or M3...