SiHFIB5N50L Description
IRFIB5N50L, SiHFIB5N50L Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 45 13 23 Single.
SiHFIB5N50L Key Features
- Super Fast Body Diode Eliminates the Need for External Diodes in ZVS
SiHFIB5N50L Applications
- Lower Gate Charge Results in Simpler Drive Reqirements