SiHFIB5N50L Datasheet | Vishay

FEATURES 500 0.67 - Super Fast Body Diode Eliminates the Need for External Diodes in ZVS Applications - Lower Gate Charge Results in Simpler Drive Reqirements Ro HS PLIANT - Enhanced d V/dt Capabilities Offer Improved Ruggedness - Higher Gate Voltage Threshold Offers Improved Noise Immunity - Lead (Pb)-free .. TO-220 FULLPAK APPLICATIONS - Zero Voltage Switching SMPS - Tele and Server Power Supplies S N-Channel MOSFET - Uninterruptible Power Supplies - Motor Control Applications ORDERING INFORMATION Package Lead (Pb)-free TO-220 FULLPAK IRFIB5N50LPb F Si HFIB5N50L-E3 ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor Single Pulse Avalanche Energyb Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery d V/dtc Operating Junction and Storage Temperature Range Soldering Remendations (Peak Temperature) Mounting Torque VGS at 10 V TC = 25 °C TC = 100 °C SYMBOL VDS VGS ID IDM EAS IAR EAR PD d V/dt TJ, Tstg LIMIT 500 ± 30 4.7 3.0 16 0.33 140 4.0 3.0 42 13 - 55 to + 150 300d 10 1.1 UNIT V A W/°C m J A m J W V/ns °C lbf - in N- m TC = 25 °C for 10 s 6-32 or M3 screw Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Starting TJ = 25 °C, L = 18 m H, RG = 25 Ω, IAS = 4.0 A, d V/dt = 13 V/ns, (see fig. 12). c. ISD ≤ 4.0 A, d I/dt ≤ 280 A/µs, VDD ≤ VDS, TJ ≤ 150 °C. d. 1.6 mm from case. Document Number: 91173 S-Pending-Rev. A, 24-Jun-08 WORK-IN-PROGRESS .vishay. 1 IRFIB5N50L, Si HFIB5N50L Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Maximum Junction-to-Case (Drain) SYMBOL Rth JA Rth JC TYP. MAX. 65 3.0 UNIT °C/W SPECIFICATIONS TJ = 25 °C, unless otherwise noted PARAMETER Static Drain-Source Breakdown Voltage .. VDS Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain...