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IRFIB7N50A, SiHFIB7N50A
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
500 VGS = 10 V
52 13 18 Single
0.52
TO-220 FULLPAK
D
G
GDS
S N-Channel MOSFET
FEATURES
• Low Gate Charge Qg Results in Simple Drive Requirement
Available
• Improved Gate, Avalanche and Dynamic dV/dt RoHS*
Ruggedness
COMPLIANT
• Fully Characterized Capacitance and Avalanche Voltage and Current
• Effective Coss Specified • Compliant to RoHS directive 2002/95/EC
APPLICATIONS • Switch Mode Power Supply (SMPS) • Uninterruptible Power Supply • High Speed Power Switching • High Voltage Isolation = 2.
SiHFIB7N50A Datasheet
