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SiHFIB7N50A - Power MOSFET

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Overview

IRFIB7N50A, SiHFIB7N50A Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 500 VGS = 10 V 52 13 18 Single 0.

Key Features

  • Low Gate Charge Qg Results in Simple Drive Requirement Available.
  • Improved Gate, Avalanche and Dynamic dV/dt RoHS.
  • Ruggedness.

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