SiHFIB7N50L Description
IRFIB7N50L, SiHFIB7N50L Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 500 VGS = 10 V 92 24 44 Single 0.320 TO-220 FULLPAK D G GDS ORDERING INFORMATION Package Lead (Pb)-free S N-Channel.
SiHFIB7N50L Key Features
- Super Fast Body Diode Eliminates the Need for External Diodes in ZVS
SiHFIB7N50L Applications
- Lower Gate Charge Results in Simpler Drive Reqirements