SiHFIB7N50L Datasheet | Vishay

FEATURES - Super Fast Body Diode Eliminates the Need for External Diodes in ZVS Applications - Lower Gate Charge Results in Simpler Drive Reqirements Ro HS PLIANT - Enhanced d V/dt Capabilities Offer Improved Ruggedness - Higher Gate Voltage Threshold Offers Improved Noise Immunity - Lead (Pb)-free APPLICATIONS - Zero Voltage Switching SMPS - Tele and Server Power Supplies - Uninterruptible Power Supplies - Motor Control Applications TO-220 FULLPAK IRFIB7N50LPb F Si HFIB7N50L-E3 ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor VGS at 10 V TC = 25 °C TC = 100 °C ID IDM Single Pulse Avalanche Energyb Avalanche Currenta Repetitive Avalanche Energya EAS IAR EAR Maximum Power Dissipation Peak Diode Recovery d V/dtc TC = 25 °C PD d V/dt Operating Junction and Storage Temperature Range TJ, Tstg Soldering Remendations (Peak Temperature) for 10 s Mounting Torque 6-32 or M3 screw Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 12). b. Starting TJ = 25 °C, L = 24 m H, RG = 25 Ω, IAS = 6.8 A (see fig. 14). c. ISD ≤ 6.8 A, d I/dt ≤ 650 A/µs, VDD ≤ VDS, d V/dt = 24 V/ns, TJ ≤ 150 °C. d. 1.6 mm from case. LIMIT 500 ± 30 6.8 4.3 27 0.37 550 6.8 4.6 46 24 - 55 to + 150 300d 10 1.1 UNIT...