.
FCH10A06 - Schottky Barrier Diode
S B D T y p e : FCH10A06 OUTLINE DRAWING FEATURES *Similar to TO-220AB Case *Fully Molded Isolation *Dual Diodes – Cathode Common *Low Forward Volta.FHP20N40 - N-channel enhancement mode power MOS field FET
)+3 1 *'672 VDS ID VGS PD TJ Tstg EAS ' * 6 Ciss Coss Crss VDS= 9,9*6 9 I 0+] VDS 9,V*6 9 I 0+] VDS=25v,VGS 9 I 0+].FHP20200 - Transistor
20200 1 1.A 2.K 3.A 72 Available RoHS* COMPLIANT VRRM IF(AV) IFSM EAS IRRM dv/dt TJ,TSTG 1 1.A 2.K 3.A TO-220F is VBR IR=1.0mA TA=25 VF .FCU10B60 - FRD
FRD Type : FCU10B60 For Power Factor Improvement High Frequency Rectification FEATURES * Fully Molded Isolation * Dual Diodes – Cathode Common * Ultra.SiHA21N60EF - Power MOSFET
www.vishay.com SiHA21N60EF Vishay Siliconix EF Series Power MOSFET with Fast Body Diode Thin-Lead TO-220 FULLPAK D G G DS S N-Channel MOSFET P.IHW40N120R3 - IGBT
Resonant Switching Series Reverse conducting IGBT with monolithic body diode IHW40N120R3 Data sheet Industrial Power Control IHW40N120R3 Resonant Swi.IHLP-1616BZ-01 - Commercial Inductors
www.vishay.com IHLP-1616BZ-01 Vishay Dale IHLP® Commercial Inductors, High Saturation Series DESIGN SUPPORT TOOLS click logo to get started Models.NSH03A03L - SBD
3A Avg. 30 Volts SBD NSH03A03L 0° θ 180° FORWARD CURRENT VS. VOLTAGE 20 NSH03A03L CONDUCTION ANGLE AVERAGE FORWARD POWER DISSIPATION NSH03A03.FHP75N08 - Low voltage high current power MOS FET
FHP75N08MOS, ★ 80A,75V,RDS(on)()8.8mΩ ★ FHP75N08 (TC=25℃) — @TC=25℃ @TC=25℃ VDS ID VGS PD TJ Tstg 75 80 ±25 270 150 -55~150 V A V W .IHLP-1212AB-11 - Commercial Inductor
www.vishay.com IHLP-1212AB-11 Vishay Dale IHLP® Commercial Inductors, Low DCR Series DESIGN SUPPORT TOOLS click logo to get started Design Tools A.40N120IHL - IGBT
NGTB40N120IHLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and prov.HDA60U60GW - Ultra Fast Recovery Diode
HDA60U60GW HDA60U60GW Ultra Fast Recovery Diode General Description With excellent performance in reverse recovery time, switching speed and rated cu.SIHB22N60AE - MOSFET
www.vishay.com SiHB22N60AE Vishay Siliconix E Series Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) typ. () at 25 °C Qg max. (nC) Qgs (n.NSF03A40 - Fast Recovery Diode
Fast Recovery Diode NSF03A40 nSMC ■ / Features ・ trr Fast recovery time ・ IR Low leakage current ・ ソフトリカバリー Soft recovery RoHS ・ RoHS compliant ・ AEC.NSD03A10 - DIODE
DIODE Type : NSD03A10 FEATURES * FLAT-PAK Surface Mount Device * High Surge Capability * Low Forward Voltage Drop * Low Reverse Leakage Current * Pack.FCH10A15 - SBD
S B D T y p e : FCH10A15 OUTLINE DRAWING FEATURES *Similar to TO-220AB Case *Fully Molded Isolation *Dual Diodes – Cathode Common *Low Forward Volta.HCU7N70S - N-Channel MOSFET
HCU7N70S HCU7N70S 700V N-Channel Super Junction MOSFET FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide T.FHP20N60 - N-Channel MOSFET
')1/ ')'/ Ӂ૭ඍ /ູ/֡ᄹ఼ۚੱۿӆིႋܵb ھӁܼٗൡႨႿ $%$षܱჷđ%$%$ ჷሇߐఖđۚ)ూ1.8ઔղ౺b Ӂหׄ 7 3%4 PO Ȥ NBY 7.RT5000L - Welding Torch for Robot Coaxial Power Cable for Robot
Welding Torch for Robot Coaxial Power Cable for Robot For CO2/MAGRT5000H - Welding Torch for Robot Coaxial Power Cable for Robot
Welding Torch for Robot Coaxial Power Cable for Robot For CO2/MAG