IKRON Datasheet | Specifications & PDF Download

SK 80 GM 063 Absolute Maximum Ratings Symbol Conditions IGBT . /# .2/# $ $ 9 (< ( ) *+ 41 , 5  : 6 5 ( ) *+ 41 , 5 ( ) *+ , -    

(5 views)

SSF7509 Main Product Characteristics: VDSS RDS(on) ID 75V 6.5mohm(typ.) 80A TO220 Marking and pin Assignment Schematic diagram Features and Benefits:

(5 views)

Main Product Characteristics: VDSS RDS(on) ID -30V 22mΩ (typ.) -6A ① SOT23-3 Features and Benefits:  Advanced MOSFET process technology  Special

(5 views)

VRSM VRRM VDRM (dv/dt)cr ITRMS (maximum values for continuous operation) 2300 A 2800 A 1780 A (55 °C) SKT 1200/04 D – SKT 1200/12 E SKT 1200/14 E S

(4 views)

SKiiP 11NAB066V1 MiniSKiiP® 1 3-phase bridge rectifier + brake chopper + 3-phase bridge inverter SKiiP 11NAB066V1 Absolute Maximum Ratings Symbol C

(4 views)

SKiiP 83 AC 12 - SKiiP 83 AC 12 I www.DataSheet4U.com Absolute Maximum Ratings Symbol VCES VGES IC ICM Tj Tstg Visol Conditions 1) Values 1200 ± 20 1

(4 views)

SKET 800 #$ % # ()** (5** #$$% # $% # (0** (-** &$% ' ()** + ,           &+# ' -*) +   (-*.  ' -) / 12 -**3(

(4 views)

SSF3022D Feathers: „ „ „ „ Advanced trench process technology Ultra low Rdson, typical 16mohm High avalanche energy, 100% test Fully characterized ava

(4 views)

SKiM 200GD126D SKiM® 4 IGBT Modules SKiM 200GD126D Data Features                      

(4 views)

SK 70 WT '203 ' ;&& $-&& $7&& '223* '23 ' 9&& $/&& $%&& 52306 7/ 8 1 6 9. : 0< 7& =1 &9 0< 7& =1 $/ 0< 7& =1 $% Characteristics Symbol Condition

(4 views)

SSF1090 Feathers:  Advanced trench process technology  Special designed for Convertors and power controls  High density cell design for ultra low

(4 views)

P2500ATL P2500MTL Axial lead diode Standard silicon rectifier diodes P2500ATL P2500MTL Forward Current: 25 A Reverse Voltage: 50 to 1000 V Pr

(4 views)

P2500ATL P2500MTL Axial lead diode Standard silicon rectifier diodes P2500ATL P2500MTL Forward Current: 25 A Reverse Voltage: 50 to 1000 V Pr

(4 views)

Main Product Characteristics: VDSS RDS(on) 700V 0.7Ω (typ.) ID 7A ① Features and Benefits: TO-251 (IPAK)  High dv/dt and avalanche capabilities

(4 views)

SSF8N65 Features ■ Extremely high dv/dt capability ■ Low Gate Charge Qg results in Simple Drive Requirement ■ 100% avalanche tested ■ Gate charge min

(4 views)

SKKT 106, SKKT 106B, SKKH 106 THYRISTOR /0.1 / 966 4 66 4#66 4>66 4966 /001 /%01 / 566 4$66 4=66 4 66 4566 2+01. 3 456 * (  ,   

(4 views)

SKM150GB17E4GH16 SEMITRANS® 3 IGBT4 Modules SKM150GB17E4GH16 Features • H16: IGBT-chip with improved robustness against moisture • IGBT4 = 4. generat

(4 views)

Main Product Characteristics: VDS 1200V ID 87A RDS(on) 32mΩ 1 234 Features and Benefits: TO - 247- 4L  High blocking voltage with low on-re

(4 views)

Main Product Characteristics: VDSS 100V RDS(on) 4.2mΩ (typ.) ID 160A TO-220 SSS1004L Features and Benefits:  Advanced MOSFET process technolog

(4 views)

SKN 600, SKR 600 VRSM V 400 800 1200 1600 Stud Diode Rectifier Diode SKN 600 SKR 600 Symbol IFAV IFSM Features  Reverse voltages up to 1600 V 

(4 views)