MOSFET MetalOxideSemiconductorFieldEffectTran.
Infineon Technologies
IPD60R800CE - MOSFET
IPD60R800CE, IPA60R800CE MOSFET 600V CoolMOSª CE Power Transistor CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed acc.
ETC
2211-1500G - FIXEDDIPDELAYLINE
2211 FIXED DIP DELAY LINE TD/TR = 10 (SERIES 2211) FEATURES • • • • High bandwidth (TD/TR =10) Low profile Epoxy encapsulated Meets or exceeds MIL-D-.
ETC
2214-120C - 20-TAPDIPDELAYLINETD/TR=10(SERIES2214)
2214 20-TAP DIP DELAY LINE TD/TR = 10 (SERIES 2214) FEATURES • • • • • 20 taps of equal delay increment High bandwidth (TD/TR =10) Low profile Epoxy .
Infineon
IPD090N03LGE8177 - MOSFET
IPD090N03L G E8177 MOSFET OptiMOSª 3 Power-Transistor, 30 V Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • Q.
Infineon
IPD30N03S2L-20 - Power-Transistor
IPD30N03S2L-20 OptiMOS® Power-Transistor Features • N-channel Logic Level - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak .
INCHANGE
IPD60R360P7 - N-Channel MOSFET
isc N-Channel MOSFET Transistor IPD60R360P7,IIPD60R360P7 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.36Ω ·Enhancement mode: ·100% avalanc.
INCHANGE
IPD031N03L - N-Channel MOSFET
isc N-Channel MOSFET Transistor IPD031N03L, IIPD031N03L ·FEATURES ·Static drain-source on-resistance: RDS(on)≤3.1mΩ ·Enhancement mode: ·100% avalanch.
INCHANGE
IPD78CN10N - N-Channel MOSFET
isc N-Channel MOSFET Transistor IPD78CN10N,IIPD78CN10N ·FEATURES ·Static drain-source on-resistance: RDS(on)≤78mΩ ·Enhancement mode: ·100% avalanche.
Infineon
IPD80R4K5P7 - MOSFET
IPD80R4K5P7 MOSFET 800V CoolMOSª P7 Power Transistor The latest 800V CoolMOS™ P7 series sets a new benchmark in 800V super junction technologies and .
Infineon
IPD80R450P7 - MOSFET
IPD80R450P7 MOSFET 800V CoolMOSª P7 Power Transistor The latest 800V CoolMOS™ P7 series sets a new benchmark in 800V super junction technologies and .
Infineon
IPD80R280P7 - MOSFET
IPD80R280P7 MOSFET 800V CoolMOSª P7 Power Transistor The latest 800V CoolMOS™ P7 series sets a new benchmark in 800V super junction technologies and .
Infineon
IPD80R1K4P7 - MOSFET
IPD80R1K4P7 MOSFET 800V CoolMOSª P7 Power Transistor The latest 800V CoolMOS™ P7 series sets a new benchmark in 800V super junction technologies and .
Infineon
IPD70R1K4CE - MOSFET
IPD70R1K4CE, IPS70R1K4CE MOSFET 700V CoolMOSª CE Power Transistor CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed acc.
ETC
2211 - FIXEDDIPDELAYLINE
2211 FIXED DIP DELAY LINE TD/TR = 10 (SERIES 2211) FEATURES • • • • High bandwidth (TD/TR =10) Low profile Epoxy encapsulated Meets or exceeds MIL-D-.
ETC
2211-1000D - FIXEDDIPDELAYLINE
2211 FIXED DIP DELAY LINE TD/TR = 10 (SERIES 2211) FEATURES • • • • High bandwidth (TD/TR =10) Low profile Epoxy encapsulated Meets or exceeds MIL-D-.
ETC
2211-1000G - FIXEDDIPDELAYLINE
2211 FIXED DIP DELAY LINE TD/TR = 10 (SERIES 2211) FEATURES • • • • High bandwidth (TD/TR =10) Low profile Epoxy encapsulated Meets or exceeds MIL-D-.
ETC
2211-100A - FIXEDDIPDELAYLINE
2211 FIXED DIP DELAY LINE TD/TR = 10 (SERIES 2211) FEATURES • • • • High bandwidth (TD/TR =10) Low profile Epoxy encapsulated Meets or exceeds MIL-D-.
ETC
2211-100B - FIXEDDIPDELAYLINE
2211 FIXED DIP DELAY LINE TD/TR = 10 (SERIES 2211) FEATURES • • • • High bandwidth (TD/TR =10) Low profile Epoxy encapsulated Meets or exceeds MIL-D-.
ETC
2211-100D - FIXEDDIPDELAYLINE
2211 FIXED DIP DELAY LINE TD/TR = 10 (SERIES 2211) FEATURES • • • • High bandwidth (TD/TR =10) Low profile Epoxy encapsulated Meets or exceeds MIL-D-.
ETC
2211-1200G - FIXEDDIPDELAYLINE
2211 FIXED DIP DELAY LINE TD/TR = 10 (SERIES 2211) FEATURES • • • • High bandwidth (TD/TR =10) Low profile Epoxy encapsulated Meets or exceeds MIL-D-.