MOSFET MetalOxideSemiconductorFieldEffectTran.
Panasonic
73
MIP2F2 - Intelligent Power Device (IPD)
インテリジェントパワーデバイス (IPD) MIP2F20MS シリコン MOS のを のをに になを の, にえ, (フ の ) とを ( ほか ) ACアダプタ Ta = 25°C±3°C ドレイン VCC VDD フィード.
Panasonic
36
MIP2K3 - (MIP2Kx) High-Performance IPD
Featuring built-in frequency jitter necessary for EMI, while also conserving power during standby! High-Performance IPD with Frequency Jitter for Sma.
Panasonic
35
MIP531 - IPD
www.DataSheet.co.kr Realizing the simplification of power Supply and downsizing IPD for switching power supply （MIP531) Overview MIP531 supporting.
Matsushita
33
MIP2E4D - High-Performance IPD
IPD I IPD (MIP022X) IPD PWM 60 W IPD I G ( 12 V/3 A : 100 VAC : 100 VAC (MIP022X) : 1/20) ; 70 mW, ; 70 , 264 VAC 264 VAC ; 130 mW ; 60 G 0.3 W IPD.
Infineon
24
IPDQ60R007CM8 - high voltage power MOSFET
IPDQ60R007CM8 MOSFET 600VCoolMOSªCM8PowerTransistor PG-HDSOP-22 TheCoolMOS™8thgenerationplatformisarevolutionarytechnologyfor highv.
Panasonic
23
MIP2K5 - (MIP2Kx) High-Performance IPD
Featuring built-in frequency jitter necessary for EMI, while also conserving power during standby! High-Performance IPD with Frequency Jitter for Sma.
Infineon
23
IPD06P004N - MOSFET
IPD06P004N MOSFET OptiMOSTMPowerTransistor,-60V Features •P-Channel •Verylowon-resistanceRDS(on) •100%avalanchetested •NormalLevel •En.
Matsushita
21
MIP2E2D - High-Performance IPD for Battery Chaegers
I (MIP022X) IPD I G( 12 V/3 A : 100 VAC 0.3 W : 100 VAC G IPD (MIP022X) MIP022X G IPD IPD PWM 60 W : 1/20) ; 70 mW, ; 70 , 264 VAC 26.
Panasonic
18
MIP2K4 - (MIP2Kx) High-Performance IPD
Featuring built-in frequency jitter necessary for EMI, while also conserving power during standby! High-Performance IPD with Frequency Jitter for Sma.
Matsushita
18
MIP2E3D - High-Performance IPD for Battery Chaegers
I (MIP022X) IPD I G( 12 V/3 A : 100 VAC 0.3 W : 100 VAC G IPD (MIP022X) MIP022X G IPD IPD PWM 60 W : 1/20) ; 70 mW, ; 70 , 264 VAC 26.
Infineon Technologies
15
13N03LA - IPD13N03LA
www.DataSheet4U.com IPD13N03LA IPU13N03LA OptiMOS®2 Power-Transistor Features • Ideal for high-frequency dc/dc converters • Qualified according to J.
Panasonic
15
MIP2K2 - (MIP2Kx) High-Performance IPD
Featuring built-in frequency jitter necessary for EMI, while also conserving power during standby! High-Performance IPD with Frequency Jitter for Sma.
ETC
12
2211-100A - FIXEDDIPDELAYLINE
2211 FIXED DIP DELAY LINE TD/TR = 10 (SERIES 2211) FEATURES • • • • High bandwidth (TD/TR =10) Low profile Epoxy encapsulated Meets or exceeds MIL-D-.
Panasonic Semiconductor
12
MIP2E4DMY - Silicon MOS IPD
www.DataSheet4U.com (IPD) MIP2E4DMY MOS I 2.8±0.2 1.5±0.2 Unit : mm 10.5±0.5 9.5±0.2 8.0±0.2 6.7±0.3 • • 4.5±0.2 1.4±0.1 I 15.4±0.3 φ 3.7±0.2 .
Infineon
12
IPD50R280CE - MOSFET
IPD50R280CE MOSFET 500VCoolMOSªCEPowerTransistor CoolMOS™isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothe.
ETC
11
2211-600D - FIXEDDIPDELAYLINE
2211 FIXED DIP DELAY LINE TD/TR = 10 (SERIES 2211) FEATURES • • • • High bandwidth (TD/TR =10) Low profile Epoxy encapsulated Meets or exceeds MIL-D-.
Infineon
11
IPD30N06S4L-23 - Power-Transistor
IPD30N06S4L-23 OptiMOS®-T2 Power-Transistor Product Summary V DS R DS(on),max ID 60 23 30 PG-TO252-3-11 V mΩ A Features • N-channel - Enhancement m.
Panasonic
11
MIP2F20MS - Intelligent Power Device (IPD)
インテリジェントパワーデバイス (IPD) MIP2F20MS シリコン MOS のを のをに になを の, にえ, (フ の ) とを ( ほか ) ACアダプタ Ta = 25°C±3°C ドレイン VCC VDD フィードバッ.
ETC
10
2214-300D - 20-TAPDIPDELAYLINETD/TR=10(SERIES2214)
2214 20-TAP DIP DELAY LINE TD/TR = 10 (SERIES 2214) FEATURES • • • • • 20 taps of equal delay increment High bandwidth (TD/TR =10) Low profile Epoxy .
Infineon
10
IPD70R360P7S - MOSFET
IPD70R360P7S MOSFET 700VCoolMOSªP7PowerTransistor CoolMOS™isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtoth.