IPD Datasheet | Specifications & PDF Download

インテリジェントパワーデバイス (IPD) MIP2F20MS シリコン MOS  　  のを  のをに  になを の, にえ, (フ の ) とを  　  ( ほか )  ACアダプタ  Ta = 25°C±3°C ドレイン VCC VDD フィード

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www.DataSheet.co.kr Realizing the simplification of power Supply and downsizing IPD for switching power supply （MIP531) „ Overview MIP531 supporting

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IPD20N03L IPU20N03L OptiMOS® Buck converter series Feature •N-Channel Product Summary VDS RDS(on) ID P- TO251 -3-1 30 20 30 P- TO252 -3-11 V mΩ A

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Featuring built-in frequency jitter necessary for EMI, while also conserving power during standby High-Performance IPD with Frequency Jitter for Sma

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IPD I IPD (MIP022X) IPD PWM 60 W IPD I G ( 12 V/3 A : 100 VAC : 100 VAC (MIP022X) : 1/20) ; 70 mW, ; 70 , 264 VAC 264 VAC ; 130 mW ; 60 G 0.3 W IPD

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I (MIP022X) IPD I G( 12 V/3 A : 100 VAC 0.3 W : 100 VAC G IPD (MIP022X) MIP022X G IPD IPD PWM 60 W : 1/20) ; 70 mW, ; 70 , 264 VAC 26

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Featuring built-in frequency jitter necessary for EMI, while also conserving power during standby High-Performance IPD with Frequency Jitter for Sma

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www.DataSheet4U.com IPD13N03LA IPU13N03LA OptiMOS®2 Power-Transistor Features • Ideal for high-frequency dc/dc converters • Qualified according to J

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www.DataSheet4U.net Type IPD053N06N3 G OptiMOS(TM)3 Power-Transistor Features • Ideal for high frequency switching and sync. rec. • Optimized techn

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Featuring built-in frequency jitter necessary for EMI, while also conserving power during standby High-Performance IPD with Frequency Jitter for Sma

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I (MIP022X) IPD I G( 12 V/3 A : 100 VAC 0.3 W : 100 VAC G IPD (MIP022X) MIP022X G IPD IPD PWM 60 W : 1/20) ; 70 mW, ; 70 , 264 VAC 26

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www.DataSheet4U.com (IPD) MIP2E4DMY MOS I 2.8±0.2 1.5±0.2 Unit : mm 10.5±0.5 9.5±0.2 8.0±0.2 6.7±0.3 • • 4.5±0.2 1.4±0.1 I 15.4±0.3 φ 3.7±0.2

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MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS™ CE 800V CoolMOS™ CE Power Transistor IPx80R1K0CE Data Sheet Rev. 2.2 Final Power Man

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OptiMOS®2 Power-Transistor Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1) for target applications • N-channel,

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IPD95R450P7 MOSFET 950V CoolMOSª P7 SJ Power Device The latest 950V CoolMOS™ P7 series sets a new benchmark in 950V super junction technologies and c

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isc N-Channel MOSFET Transistor IPD60R600C6,IIPD60R600C6 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.6Ω ·Enhancement mode: ·100% avalanch

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2211 FIXED DIP DELAY LINE TD/TR = 10 (SERIES 2211) FEATURES • • • • High bandwidth (TD/TR =10) Low profile Epoxy encapsulated Meets or exceeds MIL-D-

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( DataSheet : www.DataSheet4U.com ) r Undement p lo e Dev Saves power during standby, enhances efficiency MIP2C2 High-Performance IPD for Battery C

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Featuring built-in frequency jitter necessary for EMI, while also conserving power during standby High-Performance IPD with Frequency Jitter for Sma

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0.3mm low dark current Analog InGaAs PIN photodiode V4.1LIPD-003 20-10-01 Model: LSIPD-UL0.3 Features:  High reliability, Ultra low dark current 

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