IPD400N06N
0.97MB
Power-transistor.
TAGS
📁 Related Datasheet
IPD400N06N - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor IPD400N06N,IIPD400N06N
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤40mΩ ·Enhancement mode: ·100% avalanche .
IPD400N06NG - Power-Transistor
(Infineon Technologies)
%&$ #b $ ;B 1 ='=-: >5>?;=
7MI[\YMZ O >@50ABAE8B2 78=6 2 >=D4@B4@A 0=3 AG=2
@42 B8582 0B8>= O' 2 70==4;4=70=2 4< 4=B =>@< 0;;4D4; O
R >? .
IPD4000 - IP DSL Access Multiplexer
(Net to Net)
w
w
a D . w
S a t
e e h
U 4 t
m IP DSL Access Multiplexer 4000 o .c
IPD4000
IPD4000 IP DSL Access Multiplexer
The IP DSLAM for Central Office/.
IPD4000 - 4 Slot Ethernet Based IP DSL Access Multiplexer 12000
(LTI)
4 Slot Ethernet Based IP DSL Access m o Multiplexer 12000 c . Ethernet-based U IP DSLAM for Central Office/ 4 t Office or MDU/Campus deployments Remot.
IPD40N03S4L-08 - Power-Transistor
(Infineon)
OptiMOS®-T2 Power-Transistor
Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating .
IPD48CN10NG - Power Transistor
(Infineon)
$ $
$ $ $
%&$ #
$ ;B 1 = '= -: >5 >? ;=
$= ;0@/?& @9 9 -= D 7MI[\YMZ ).
IPD49CN10NG - Power Transistor
(Infineon)
OptiMOS®2 Power-Transistor
Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on)
IPB5.
IPD025N06N - MOSFET
(Infineon)
MOSFET
Metal Oxide Semiconductor Field Effect Transistor
OptiMOSTM
OptiMOSTM Power-Transistor, 60 V IPD025N06N
Data Sheet
Rev. 2.5 Final
Power Managem.
IPD025N06N - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor IPD025N06N, IIPD025N06N
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤2.5mΩ ·Enhancement mode: ·100% avalanch.
IPD029N04NF2S - MOSFET
(Infineon)
IPD029N04NF2S
MOSFET
StrongIRFETTM2 Power-Transistor
Features
• Optimized for wide range of applications • N-channel, normal level • 100% avalanche t.
