IPD068N10N3 Datasheet | Specifications & PDF Download

IPD068N10N3 G OptiMOS®3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance

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isc N-Channel MOSFET Transistor IPD068N10N3,IIPD068N10N3 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤6.8mΩ ·Enhancement mode: ·100% avalanc

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IPD068N10N3 G OptiMOS®3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance

(13 views)