isc N-Channel MOSFET Transistor IPD068N10N3,IIPD06.
Infineon Technologies
IPD068N10N3G - Power-Transistor
IPD068N10N3 G OptiMOS®3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance.
Infineon
IPD068N10N3 - Power-Transistor
IPD068N10N3 G OptiMOS®3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance.
INCHANGE
IPD068N10N3 - N-Channel MOSFET
isc N-Channel MOSFET Transistor IPD068N10N3,IIPD068N10N3 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤6.8mΩ ·Enhancement mode: ·100% avalanc.