isc P-Channel MOSFET Transistor IPD068P03L3,IIPD06.
Infineon Technologies
IPD068P03L3G - Power-Transistor
OptiMOSTM P3 Power-Transistor Features • single P-Channel in DPAK • Qualified according JEDEC1) for target applications • 175 °C operating temperature.
INCHANGE
IPD068P03L3 - N-Channel MOSFET
isc P-Channel MOSFET Transistor IPD068P03L3,IIPD068P03L3 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤6.8mΩ ·Enhancement mode: ·100% avalanc.
Infineon
IPD068P03L3 - Power-Transistor
OptiMOSTM P3 Power-Transistor Features • single P-Channel in DPAK • Qualified according JEDEC1) for target applications • 175 °C operating temperature.