IPD068P03L3 Datasheet | Specifications & PDF Download

OptiMOSTM P3 Power-Transistor Features • single P-Channel in DPAK • Qualified according JEDEC1) for target applications • 175 °C operating temperature

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isc P-Channel MOSFET Transistor IPD068P03L3,IIPD068P03L3 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤6.8mΩ ·Enhancement mode: ·100% avalanc

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OptiMOSTM P3 Power-Transistor Features • single P-Channel in DPAK • Qualified according JEDEC1) for target applications • 175 °C operating temperature

(8 views)