IPD082N10N3 Datasheet | Specifications & PDF Download

www.DataSheet.co.kr IPP086N10N3 G IPB083N10N3 G IPI086N10N3 G IPD082N10N3 G OptiMOS™3 Power-Transistor Features • N-channel, normal level • Excelle

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isc N-Channel MOSFET Transistor IPD082N10N3,IIPD082N10N3 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤8.2mΩ ·Enhancement mode: ·100% avalanc

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www.DataSheet.co.kr IPP086N10N3 G IPI086N10N3 G IPB083N10N3 G IPD082N10N3 G OptiMOS™3 Power-Transistor Features • N-channel, normal level • Excellen

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