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IPD082N10N3G - Power-Transistor
www.DataSheet.co.kr IPP086N10N3 G IPB083N10N3 G IPI086N10N3 G IPD082N10N3 G OptiMOS™3 Power-Transistor Features • N-channel, normal level • Excelle.IPD082N10N3 - Power-Transistor
www.DataSheet.co.kr IPP086N10N3 G IPI086N10N3 G IPB083N10N3 G IPD082N10N3 G OptiMOS™3 Power-Transistor Features • N-channel, normal level • Excellen.IPD082N10N3 - N-Channel MOSFET
isc N-Channel MOSFET Transistor IPD082N10N3,IIPD082N10N3 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤8.2mΩ ·Enhancement mode: ·100% avalanc.