IPD096N08N3 Datasheet | Specifications & PDF Download

OptiMOS(TM)3 Power-Transistor Features • Ideal for high frequency switching • Optimized technology for DC/DC converters • Excellent gate charge x R DS

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OptiMOS(TM)3 Power-Transistor Features • Ideal for high frequency switching • Optimized technology for DC/DC converters • Excellent gate charge x R DS

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isc N-Channel MOSFET Transistor IPD096N08N3,IIPD096N08N3 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤9.6mΩ ·Enhancement mode: ·100% avalanc

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