IPD096N08N3 Datasheet | Specifications & PDF Download

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IPD096N08N3 N-Channel MOSFET

isc N-Channel MOSFET Transistor IPD096N08N3,IIPD09.

Infineon Technologies

IPD096N08N3G - Power-Transistor

 OptiMOS(TM)3 Power-Transistor Features • Ideal for high frequency switching • Optimized technology for DC/DC converters • Excellent gate charge x R DS.
Rating: 1 ★ (2 votes)
Infineon

IPD096N08N3 - Power-Transistor

 OptiMOS(TM)3 Power-Transistor Features • Ideal for high frequency switching • Optimized technology for DC/DC converters • Excellent gate charge x R DS.
Rating: 1 ★ (1 votes)
INCHANGE

IPD096N08N3 - N-Channel MOSFET

 isc N-Channel MOSFET Transistor IPD096N08N3,IIPD096N08N3 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤9.6mΩ ·Enhancement mode: ·100% avalanc.
Rating: 1 ★ (1 votes)
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