IPD200N15N3 Datasheet | Specifications & PDF Download

IPB200N15N3 G IPD200N15N3 G IPI200N15N3 G IPP200N15N3 G OptiMOS™3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(

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IPB200N15N3 G IPD200N15N3 G IPI200N15N3 G IPP200N15N3 G OptiMOS™3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(

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isc N-Channel MOSFET Transistor IPD200N15N3,IIPD200N15N3 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤20mΩ ·Enhancement mode: ·100% avalanch

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