MOSFET Metal Oxide Semiconductor Field Effect Tran.
IPI65R280E6 - N-Channel MOSFET
isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.28Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche .IPI65R280E6 - Power Transistor
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS E6 650V CoolMOS™ E6 Power Transistor IPx65R280E6 Data Sheet Rev. 2.0, 2010-04-26 Fi.