INCHANGE Semiconductor isc N-Channel Mosfet Transi.
IRF612 - FIELD EFFECT POWER TRANSISTOR
DO D[]~[F~ FIELD EFFECT POWER TRANSISTOR IRF612,613 2.0 AMPERES 200, 150 VOLTS ROS(ON) = 2.4 n This series of N-Channel Enhancement-mode Power MOSFE.IRF612 - N-Channel Mosfet Transistor
INCHANGE Semiconductor isc N-Channel Mosfet Transistor ·FEATURES ·Low RDS(on) ·VGS Rated at ±20V ·Silicon Gate for Fast Switching Speed ·Rugged ·Low D.