IRF630S Datasheet | Specifications & PDF Download

Philips Semiconductors Product specification N-channel TrenchMOS™ transistor IRF630, IRF630S FEATURES • ’Trench’ technology • Low on-state resista

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Power MOSFET IRF630S, SiHF630S Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 200 VGS = 10 V

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® IRF630S N - CHANNEL 200V - 0.35Ω - 9A - D2PAK MESH OVERLAY ™ MOSFET TYPE IRF630S s s s s s s V DSS 200 V R DS(on) < 0.40 Ω ID 9 A TYPICAL RDS(

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