IRF9540N Datasheet | Specifications & PDF Download

www.DataSheet4U.com PD - 91437B IRF9540N HEXFET® Power MOSFET l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperat

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isc P-Channel MOSFET Transistor IRF9540N,IIRF9540N ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.117Ω ·Enhancement mode: ·100% avalanche t

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• Lead-Free PD - 94790A IRF9540NPbF www.irf.com 1 01/23/04 IRF9540NPbF 2 www.irf.com IRF9540NPbF www.irf.com 3 IRF9540NPbF 4 www.irf.com

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PD - 91483C IRF9540NS/L HEXFET® Power MOSFET Advanced Process Technology Surface Mount (IRF9540S) l Low-profile through-hole (IRF9540L) l 175°C Opera

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PD - 91483C IRF9540NS/L HEXFET® Power MOSFET Advanced Process Technology Surface Mount (IRF9540S) l Low-profile through-hole (IRF9540L) l 175°C Opera

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www.DataSheet4U.com PD - 96030 HEXFET® Power MOSFET l l l l l l l l IRF9540NSPbF IRF9540NLPbF VDSS = -100V RDS(on) = 117mΩ Advanced Process Techno

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• Lead-Free PD - 94790A IRF9540NPbF www.irf.com 1 01/23/04 IRF9540NPbF 2 www.irf.com IRF9540NPbF www.irf.com 3 IRF9540NPbF 4 www.irf.com

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www.DataSheet4U.com PD - 96030 HEXFET® Power MOSFET l l l l l l l l IRF9540NSPbF IRF9540NLPbF VDSS = -100V RDS(on) = 117mΩ Advanced Process Techno

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isc P-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on)≤117mΩ(@VGS= -10V; ID= -11A) ·Advanced trench process technology

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isc P-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on)≤117mΩ(@VGS= -10V; ID= -11A) ·Advanced trench process technology

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AUTOMOTIVE GRADE PD - 97626 Features l l l l l l l l AUIRF9540N D Advanced Planar Technology Dynamic dV/dT Rating 175°C Operating Temperature Fast

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