IRFI510 Datasheet | Specifications & PDF Download

iscN-Channel MOSFET Transistor ·FEATURES ·Low drain-source on-resistance: RDS(ON) =0.54Ω (MAX) ·Enhancement mode: Vth = 2 to 4V (VDS = 10 V, ID=0.25m

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Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Ope

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Power MOSFET IRFI510G, SiHFI510G Vishay Siliconix PRODUCT SUMMARY VDS (V) 100 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configura

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Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Ope

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