IRFIZ44N Datasheet | Specifications & PDF Download

AUTOMOTIVE GRADE PD - 97767 Features l l l l l l l l l Advanced Planar Technology Low On-Resistance Isolated Package High Voltage Isolation = 2.5KV

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 Advanced Process Technology  Isolated Package  High Voltage Isolation = 2.5KVRMS   Sink to Lead Creepage Dist. = 4.8mm  Fully Avalanche Rated 

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PD - 94836 IRFIZ44NPbF l l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS … Sink to Lead Creepage Dist. = 4.

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Isc N-Channel MOSFET Transistor ·FEATURES ·With TO-220F package ·Low input capacitance and gate charge ·Low gate input resistance ·Reduced switching a

Rating: 1 ★ (2 votes)

 Advanced Process Technology  Isolated Package  High Voltage Isolation = 2.5KVRMS   Sink to Lead Creepage Dist. = 4.8mm  Fully Avalanche Rated 

Rating: 1 ★ (2 votes)

l Advanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVRMS … l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated

Rating: 1 ★ (1 votes)