IRFIZ48 Datasheet | Specifications & PDF Download

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PD 9.1407 PRELIMINARY IRFIZ48N HEXFET® Power MOSFET D l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sin

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PD-94072 IRFIZ48V HEXFET® Power MOSFET Advanced Process Technology Ultra Low On-Resistance l Isolated Package l High Voltage Isolation = 2.5KVRMS ˆ l

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l Advanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVRMS … l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated l

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l Advanced Process Technology l Ultra Low On-Resistance l Isolated Package l High Voltage Isolation = 2.5KVRMS ˆ l Fast Switching l Fully Avalanche Ra

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Isc N-Channel MOSFET Transistor ·FEATURES ·With TO-220F package ·Low input capacitance and gate charge ·Low gate input resistance ·Reduced switching a

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www.vishay.com IRFIZ48G Vishay Siliconix Power MOSFET D TO-220 FULLPAK G S GD S N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 60 VGS =

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iscN-Channel MOSFET Transistor IRFIZ48G ·FEATURES ·Low drain-source on-resistance: RDS(ON) ≤18mΩ @VGS=10V ·Enhancement mode: Vth = 2.0 to 4.0V (VDS

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