IRFP048 Datasheet | Specifications & PDF Download

PD - 9.1409A IRFP048N HEXFET® Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Ful

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Power MOSFET IRFP048, SiHFP048 Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) 60 VGS = 10 V 110 Qgs (nC) 29 Qgd (nC) 38

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isc N-Channel MOSFET Transistor IRFP048N，IIRFP048N ·FEATURES ·Static drain-source on-resistance: RDS(on)≤16mΩ ·Enhancement mode: ·100% avalanche tes

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• Lead-Free PD- 95671 IRFP048PbF 1 IRFP048PbF 2 IRFP048PbF TO-247AC Package Outline Dimensions are shown in millimeters (inches) TO-247AC Part Ma

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www.vishay.com IRFP048R, SiHFP048R Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg max. (nC) Qgs (nC) Qgd (nC) Configuration

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• Lead-Free PD- 95422 IRFP048NPbF www.irf.com 1 06/16/04 IRFP048NPbF 2 www.irf.com IRFP048NPbF www.irf.com 3 IRFP048NPbF 4 www.irf.com IRFP04

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iscN-Channel MOSFET Transistor IRFP048 ·FEATURES ·Low drain-source on-resistance: RDS(ON) ≤18mΩ @VGS=10V ·Enhancement mode: Vth = 2.0 to 4.0V (VDS =

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iscN-Channel MOSFET Transistor IRFP048R ·FEATURES ·Low drain-source on-resistance: RDS(ON) ≤18mΩ @VGS=10V ·Enhancement mode: Vth = 2.0 to 4.0V (VDS

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