IRFP9140N Datasheet | Specifications & PDF Download

isc P-Channel MOSFET Transistor IRFP9140N，IIRFP9140N ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.117Ω ·Enhancement mode: ·100% avalanche

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PD - 9.1492A PRELIMINARY l l l l l l IRFP9140N HEXFET® Power MOSFET D Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature

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l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l P-Channel l Fast Switching l Fully Avalanche Rated l Lead-Free G

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